WANG Dening
,
WANG Weiyuan Ion Implantation Lab.
,
Shanghai Institute of Metallurgy
,
Academia Sinica
,
Shanghai
,
China Associate Professor
,
Laboratory No.6
,
Shanghai Institute of Metallurgy
,
Academia Sinica
,
Shanghai 200050
,
China
金属学报(英文版)
The formulae for calculating the electronic stopping power.for heavy ion implanting into metal are derived by using Wigner-Sietz radius r_s,equivalent charge,Fermi velocity and Ziegler's values of hydrogen electronic stopping power.Meanwhile the.formulae of electronic stopping power S_e(E)for alloys with boride or CsCl structure are also proposed.The calculated results are found as follows:these formulae are suitable only for mono-or bi-borides,but not for borides with more complex structure such as Cr_5B_3 or W_2B_5;the coefficient γ,of S_e(E)for al- loys with CsCI structure deviating from Bragg's S_e(E)is directly proportional to charge trans- fer in alloy.This means the larger the charge transfer is,the more stronger the metallic bond is.Hence the S_e(E)created by metallic bond in alloys will increase; there is a tendency for it to increase with increasing separation of two components in alloy on either side of Cr group at same periods,when the two components are in different periods,the tendency is more larger.
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